| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fabrication of Mn-Doped GaN Nanobars |
| XUE Cheng-Shan, LIU Wen-Jun, SHI Feng, ZHUANG Hui-Zhao, GUO Yong-Fu, CAO Yu-Ping, SUN Hai-Bo |
| Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014 |
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| Cite this article: |
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XUE Cheng-Shan, LIU Wen-Jun, SHI Feng et al 2010 Chin. Phys. Lett. 27 038102 |
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Abstract We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000ºC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.
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| Keywords:
81.05.Ea
61.46.Km
81.15.Cd
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Received: 11 August 2009
Published: 09 March 2010
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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81.15.Cd
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(Deposition by sputtering)
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