| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature |
| KONG Ning, LIU Jun-Qi, LI Lu, LIU Feng-Qi, WANG Li-Jun, WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 |
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| Cite this article: |
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KONG Ning, LIU Jun-Qi, LI Lu et al 2010 Chin. Phys. Lett. 27 038501 |
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Abstract We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200\times 200 ×μm2 square mesa.
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| Keywords:
85.60.Gz
81.15.Hi
85.35.Be
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Received: 30 November 2009
Published: 09 March 2010
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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