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Strained and Piezoelectric Characteristics of Nitride Quantum Dots |
| LU Yan-Wu1;CAI Lin2;LIANG Shuang1 |
| 1Department of Physics, Beijing Jiaotong University, Beijing 100044
2School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 |
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| Cite this article: |
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LU Yan-Wu, CAI Lin, LIANG Shuang 2006 Chin. Phys. Lett. 23 956-959 |
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Abstract The deformation potential and piezoelectric field in nitride GaN/AlN quantum dots (QDs) are investigated in the framework of effective mass approximation (EMA) and finite element method (FEM). The strained fields and piezoelectric characteristics are studied by using FEM for GaN/AlN QDs (GaN embedded in AlN) in the shape of truncated hexagonal pyramids. We presented the calculated results of the electronic states, wave functions, QD strain field distribution and piezoelectric effects in the QDs. Effects of spontaneous and piezoelectric polarization are taken into account in the calculation. The theoretical results are dependent on QD shapes and sizes. Some of them make the GaN/AlN QDs interesting candidates in optoelectronic applications.
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| Keywords:
73.21.La
78.67.Hc
81.07.Ta
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Published: 01 April 2006
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