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Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices |
| DAI Zhen-Hong1,2;NI Jun1 |
| 1Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084
Department of Physics, Yantai University, Yantai 264005 |
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| Cite this article: |
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DAI Zhen-Hong, NI Jun 2006 Chin. Phys. Lett. 23 960-963 |
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Abstract We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant-tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I-V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I-V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.
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| Keywords:
73.40.Gk
73.31.Fg
73.23.-b
73.50.-h
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Published: 01 April 2006
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