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Thermal Stability of Strained AlGaN/GaN Heterostructures |
| ZHANG Min;XIAO Hong-Di;LIN Zhao-Jun |
| School of Physics and Microelectronics, Shandong University, Jinan 250100 |
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| Cite this article: |
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ZHANG Min, XIAO Hong-Di, LIN Zhao-Jun 2006 Chin. Phys. Lett. 23 1902-1902 |
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Abstract The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700°C 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance--voltage measurements, and the self-consistent solution of Schrodinger's and Poisson's equations, it is found that after 700°C 30-min thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas (2DEG) electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.
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| Keywords:
73.40.Kp
85.30.-z
72.80.Ey
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Published: 01 July 2006
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.-z
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(Semiconductor devices)
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72.80.Ey
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(III-V and II-VI semiconductors)
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