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Structural, Morphology and Optical Properties of Epitaxial ZnO Films Grown on Al2O3 by MOCVD |
| ZHOU Sheng-Qiang1;WU Ming-Fang1;YAO Shu-De1;WANG Li2;JIANG Feng-Yi2 |
| 1School of Physics, Peking University, Beijing 100871
2Engineering Research Center for Luminescent Materials and Devices (Ministry of Education), Nanchang University, Nanchang 330047 |
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| Cite this article: |
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ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De et al 2006 Chin. Phys. Lett. 23 1023-1025 |
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Abstract Epitaxial ZnO films are grown on Al2O3 (0001) by the MOCVD method. These films are high quality wurtzite crystals with (0001) orientation. Big hexagonal crystallites (diameter from several decades to 100μm) are found on the surface. Inside these crystallites, a stronger luminescence is observed compared with the plain area. Transmission electronic microscopy reveals that the film is thicker inside the hexagonal crystallites than the plain area, and some crystallites are not connected with each other and are slightly rotated with respect to their neighbours.
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| Keywords:
78.66.Hf
61.10.Nz
68.37.Lp
82.80.Yc
78.60.Hk
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Published: 01 April 2006
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| PACS: |
78.66.Hf
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(II-VI semiconductors)
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61.10.Nz
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68.37.Lp
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(Transmission electron microscopy (TEM))
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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78.60.Hk
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(Cathodoluminescence, ionoluminescence)
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