Nucleation and Growth Processes During Molecular-Beam Epitaxy of Ternary Compounds

Chin. Phys. Lett.

1996, Vol. 13

Issue (11): 855-858 DOI:

Original Articles

Nucleation and Growth Processes During Molecular-Beam Epitaxy of Ternary Compounds

MAO Hui-bing

Department of Materials Science, Fudan University, Shanghai 200433

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MAO Hui-bing 1996 Chin. Phys. Lett. 13 855-858

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Abstract In this letter the effect of the different migration rates of two kinds of cations on the nucleation and growth processes during molecular-beam epitaxy of ternary systems was studied in detail by Monte Carlo simulation. In AlGaAs ternary system, in which the migration rate of cation Ga is larger than that of Al, there are three types of nucleation: Ga-Ga, Al-Ga and Al-Al, which show different characteristics in the growth processes.

Keywords: 68.55.-a 68.35.Bs 68.35.Ja

Published: 01 November 1996

PACS:	68.55.-a	(Thin film structure and morphology)
	68.35.Bs
	68.35.Ja	(Surface and interface dynamics and vibrations)

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