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Evidence for Octupole Correlations in 117Xe
LIU Zhong, SUN Xiang-fu, ZHOU Xiao-hong, LEI Xiang-guo, GUO Ying-xiang, JIN Han-juan, ZHANG Yu-hu, CHEN Xin-feng, LUO Yi-xiao, WEN Shu-xian, YANG Chun-xiang, YUAN Guan-jun, LI Guang-sheng, LIU Xiang-an, Chen Yong-shou
Chin. Phys. Lett. 1996, 13 (11):
805-808
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High spin states in neutron-deficient 117Xe have been studied by using in-beam γ spectroscopy method. A new positive-parity rotational band has been identified. It decays into the yrast vh11/2 band via five electric dipole transitions. The magnitudes of these E1 transitions are extracted and they are much enhanced compared to the normal E1 transitions. This is taken as an evidence for octupole correlations in 117Xe.
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A New Photorefractive Polymer with Fast Response
GAO Hong, DOU Shuo-Xing, ZHANG Jia-sen, YE Pei-xian, WANG Xue-song, ZHANG Bao-wen, HE Guang-qian, CAO Yi
Chin. Phys. Lett. 1996, 13 (11):
837-840
.
Photorefractivity properties of a polymer are investigated by four-wave mixing (FWM) diffraction measurements. The polymer is composed of photoconducting poly (n-vinylcarbazole), photosensitizing 2,4,7-trinitro-9-fluorenone, and optically nonlinear 4-(dicyanoviny1)-N. N-diethylaniline. Its FWM diffraction efficiency and response time as a function of, respectively, electric field and writing intensity have been determined. With a 80μm-think film, a diffraction efficiency of 7.4 x10-4 has been obtained. The response time of the polymer is as short as 400ms at a writing intensity of 0.17W/cm2.
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Large Piezoresistance and Pressure-Induced Change in Electric Properties in Perovskite-like La0.85Sr0.15MnO3
ZHANG Ning, DING Wei-ping, GUO Zai-bing, XING Ding-yu,
DU You-wei, LI Gang, ZHENG Yi-xin
Chin. Phys. Lett. 1996, 13 (11):
870-873
.
Uniaxial pressure dependencies of the electric properties of perovskite-like Lal-xSrxMnO3(0.2 ≤x ≤0.6) system have been investigated. A large nonlinear piezoresistance effect and a remarkable pressure-induced change of metal-semiconductor (M-S) transition have been observed. For La0.7Sr0.3MnO3, the piezoresistance value can reach about 86% at 290K under a pressure of 16.8MPa, and the pressure coefficient of Tp, the onset of the M-S transition, is as high as 6.4 K/MPa, which is significantly larger than that of known similar pressure effects. These pressure effects suggest that the resistivity of the perovskite compounds is relative not only to double exchange but also to the symmetry of lattice. This phenomenon may provide another route in understanding the colossal magnetoresistance behavior in the perovskites.
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Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation
YING Zhi-feng, REN Zhong-min, DU Yuan-cheng, LI Fu-ming, LIN Jing, REN Yun-zhu, ZONG Xiang-fu
Chin. Phys. Lett. 1996, 13 (11):
878-880
.
In order to obtain high quality carbon nitride films, x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film: (a) laser-ablated amorphous carbon (a-C) films, (b) a-C films after a 1 keV nitrbgen ion beam bombardment. (c) carbon nitride (CNx) films synthesized by ablation assisted with ion beam bombardment, (d) CNx films after a 50eV nitrogen ion beam bombardment, and (e) CNx films after a 1 keV nitrogen ion beam bombardment. The comparison among these films showed that the concurrent deposition of CNx films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment. In the case of concurrent deposited CNx films, a post-treatment by a nitrogen ion beam bombardment with an appropriate energy (possibly less than 1 keV) was proposed to improve the ratio of C-N binding structures in the deposited films.
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21 articles
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