Study of Optical Nonlinearity in Hydrogenated Amorphous Silicon Carbide Film

Chin. Phys. Lett.

1993, Vol. 10

Issue (3): 151-154 DOI:

Original Articles

Study of Optical Nonlinearity in Hydrogenated Amorphous Silicon Carbide Film

XU Jun;CHEN Kunji;HUANG Xinfan;FENG Duan;ZHANG Dakui^*;LI Qun^*;WANG Wenyao^*;QIU Peihua^*

Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008 ^*Shanghai Institute of Optical and Fine Mechanics, Academia Sinica, Shanghai 201800

Cite this article:

XU Jun, CHEN Kunji, HUANG Xinfan et al 1993 Chin. Phys. Lett. 10 151-154

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Abstract Hydrogenated amorphous silicon carbide (a-Sic_x:H) films were prepared by glow discharge technique with gas mixture of silane (SiH₄) and methan (CH₄). The room-temperature optical bistability was demonstrated in uncoated a-SiC_x:H films at the excitation wavelength about 532nm. The switch-on intensity of device is about 0.8 MW/cm² and the switching time is in the nanosecond scale. The physical origin of the optical nonlin5arity in these materials is also discussed.

Keywords: 42.65.Pc 78.65.Gb 61.40.+b

Published: 01 March 1993

PACS:	42.65.Pc	(Optical bistability, multistability, and switching, including local field effects)
	78.65.Gb
	61.40.+b

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1993/V10/I3/0151

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	XU Jun
	CHEN Kunji
	HUANG Xinfan
	FENG Duan
	ZHANG Dakui
	LI Qun
	WANG Wenyao
	QIU Peihua

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