Effects of H<sup>+</sup>-Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)

Chin. Phys. Lett.

1993, Vol. 10

Issue (5): 294-297 DOI:

Original Articles

Effects of H⁺-Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)

TIAN Renhe

Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875

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TIAN Renhe 1993 Chin. Phys. Lett. 10 294-297

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Abstract By using the plan-view transmission electron microscopy, cross-sectional transmission electron microscopy, and Rutherford backscattering (and channeling) spectrometry technology, the effects of H⁺-implantation on the formation of secondary defects in self-implanted Si(100) were investigated. Experiments indicate that the H⁺-implantation can reduce the formation of secondary defects and improve the perfection of crystal in self-implanted Si(100).

Keywords: 61.70.At 61.70.Sk 61.80.-x

Published: 01 May 1993

PACS:	61.70.At
	61.70.Sk
	61.80.-x	(Physical radiation effects, radiation damage)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1993/V10/I5/0294

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