| Original Articles |
|
|
|
|
Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode |
| LIU Bo1;FENG Gao-Ming1;WU Liang-Cai1;SONG Zhi-Tang1;LIU Qi-Bin1;FENG Song-Lin1;CHEN Bomy2 |
| 1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA |
|
| Cite this article: |
|
LIU Bo, FENG Gao-Ming, WU Liang-Cai et al 2007 Chin. Phys. Lett. 24 262-264 |
|
|
|
|
Abstract In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm echnology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.
|
| Keywords:
85.35.-p
85.30.De
73.90.+f
|
|
|
Published: 01 January 2007
|
|
| PACS: |
85.35.-p
|
(Nanoelectronic devices)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
73.90.+f
|
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
