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STUDIES OF ALL-NIOBIUM ELECTRODE JOSEPHSON TUNNEL JUNCTIONS WITH AMORPHOPUS SILICON BARRIERS |
| MENG Xiaofan;WANG Xiewen |
| Department of Physics, Peking University, Beijing |
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| Cite this article: |
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MENG Xiaofan, WANG Xiewen 1987 Chin. Phys. Lett. 4 369-372 |
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Abstract This paper reports the fabrication and properties of small Nb--( a-Si )-Nb-(a-Si)-Nb Josephson tunnel junctions. The smallest junction area is about 0.3μm2. A thin a-Si film deposited by electron beam evaporation was oxidized and used for the tunnel barriers. TEM and XPS investigations indicate that the barrier layers consist of SiOx and Si. The junctions have been used for RF SQUID with an energy resolution of 1.9 x l0-28 J/Hz.
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Published: 01 August 1987
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