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EFFECT ON TRANSPORT PROPERTIES OF ELECTRONS AT MODULATION-DOPED GaAs/AlGaAs HETEROSTRUCTURE INTERFACE BY NEUTRON IRRADIATION |
| WU Yongsheng;HUANG Yi;ZHOU Junming;MENG Xiangti* |
| Institute of Physics, Academia Sinica, Beijing
*Institute o f Nuclear Energy Technology, Tsinghua University, Beijing |
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| Cite this article: |
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WU Yongsheng, HUANG Yi, ZHOU Junming et al 1987 Chin. Phys. Lett. 4 373-376 |
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Abstract It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional (2D) electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17% and 23%, respectively, and the Hall plateaus and the minima of Shubnikov-de Haas (S-dH) oscillation curves anomalously shifted over each other. The measurements after three weeks showed that the effects mentioned above had disappeared substantially, however, the stronger persistent photoconductivity still remained.
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Published: 01 August 1987
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