| Original Articles |
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THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001) |
| HU Yong-jun;LIN Zhang-da;WANG Chang-heng;XIE Kan |
| Institute of Physics, Academia Sinaca, Beijing |
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| Cite this article: |
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HU Yong-jun, LIN Zhang-da, WANG Chang-heng et al 1985 Chin. Phys. Lett. 2 157-160 |
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Abstract UPS, XPS, AES and LEED have been applied to the study on the scmrples prepared by low energy N+(0.5KeV) sputtering of the clean cleavaged surface of 2H-MoS2 (0001). A new "shoulder" of a band tail above the top of the dz2 band shows that the surface is chemically active to O2 at room temperature, The causes for the chemical activeness have been analyzed.
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Published: 01 April 1985
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