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A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In0.5Ga0.5As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy |
WANG Xiao-Dong;NIU Zhi-Chuan;FENG Song-Lin;MIAO Zhen-Hua |
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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Cite this article: |
WANG Xiao-Dong, NIU Zhi-Chuan, FENG Song-Lin et al 2001 Chin. Phys. Lett. 18 608-610 |
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Abstract Self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35μm at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition method. Photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mounds-like morphology of the islands elongated along the [1ī0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1ī0] direction. Our results present important information for the fabrication of 1.3μm wavelength quantum dot devices.
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Keywords:
81.05.Ea
68.35.Bs
78.66.Fd
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Published: 01 April 2001
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