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High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy |
| PAN Zhong;LI Lian-He;DU Yun;LIN Yao-Wang;WU Rong-Han |
| State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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PAN Zhong, LI Lian-He, DU Yun et al 2001 Chin. Phys. Lett. 18 659-661 |
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Abstract GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made dc-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57μm at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850°C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850°C was obtained. The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20°C-75°C.
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| Keywords:
68.55.Bd
78.55.Cr
78.65.Fa
61.70.At
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Published: 01 May 2001
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