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Silicon-on-Insulator Structure Fabricated by Electron Beam Evaporation of Si on Porous Si and Epitaxial Layer Transfer |
| LIU Wei-Li1;DUO Xin-Zhong1;WANG Lian-Wei1;ZHANG Miao1;SHEN Qin-Wo1;LIN Cheng-Lu1;Paul K. Chu2 |
| 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
2Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong
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| Cite this article: |
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LIU Wei-Li, DUO Xin-Zhong, WANG Lian-Wei et al 2001 Chin. Phys. Lett. 18 662-664 |
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Abstract Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation. Results of reflection high energy electron diffraction, atomic force microscopy, cross-section transmission electron microscopy and Rutherford backscattering spectrometry and channeling (RBS/C) show a good quality of the epitaxial layer. Furthermore, silicon-on-insulator materials were successfully produced by bond and etch back of porous silicon. The quality of the silicon on insulator samples was investigated by RBS/C and spreading resistance profiling. Experimental results show that both the crystalline quality and electrical quality are good. In addition, the interface between the top Si layer and SiO2 buried layer is very sharp.
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| Keywords:
68.55.+g
68.60.-p
61.16.Bg
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Published: 01 May 2001
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