| Original Articles |
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Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates |
| LI Xian-Jie1,2;YAN Fa-Wang1,2;ZHANG Wen-Jun1;ZHANG Rong-Gui1;LIU Wei-Ji1;AO Jin-Ping1,3;ZENG Qing-Ming1;LIU Shi-Yong2;LIANG Chun-Guang1 |
| 1Hebei Semiconductor Research Institute, Shijiazhuang 050051
2Department of Electronic Engineering, Jilin University, Changchun 130023
3Department of Electrical and Electronic Engineering, Tokushima University, Tokushima 770-8506, Japan
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| Cite this article: |
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LI Xian-Jie, YAN Fa-Wang, ZHANG Wen-Jun et al 2001 Chin. Phys. Lett. 18 1147-1149 |
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Abstract A functional field effect transistor with self-organized In0.15Ga0.85As/GaAs quantum wires (QWRs) as a channel was achieved by molecular beam epitaxy on a (553)B GaAs substrate. Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure. The device with a gate-length of 2 μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature. The saturated drain current is as high as 5.6 mA. The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer. In addition, the effective gate width was discussed in comparison with the geometric gate width of the device, from which a larger maximum transconductance of 130 mS/mm could be estimated.
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| Keywords:
85.30.Vw
81.15.Hi
73.40.-c
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Published: 01 August 2001
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| PACS: |
85.30.Vw
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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73.40.-c
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(Electronic transport in interface structures)
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