Chin. Phys. Lett.  2001, Vol. 18 Issue (11): 1507-1509    DOI:
Original Articles |
Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon
HUANG Yi-Ping1;ZHU Shi-Yang1;LI Ai-Zhen1;WANG Jin1;HUANG Jing-Yun2;YE Zhi-Zhen2
1Department of Microelectronics, ASIC & System State Key Laboratory, Fudan University, Shanghai 200433 2State Key Laboratory of Silicon Material Science, Zhejiang Univsity, Hangzhou 310027
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HUANG Yi-Ping, ZHU Shi-Yang, LI Ai-Zhen et al  2001 Chin. Phys. Lett. 18 1507-1509
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Abstract The epitaxial growth of high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction, cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.
Keywords: 68.55.-a      68.60.-p      61.43.Gt     
Published: 01 November 2001
PACS:  68.55.-a (Thin film structure and morphology)  
  68.60.-p (Physical properties of thin films, nonelectronic)  
  61.43.Gt (Powders, porous materials)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2001/V18/I11/01507
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HUANG Yi-Ping
ZHU Shi-Yang
LI Ai-Zhen
WANG Jin
HUANG Jing-Yun
YE Zhi-Zhen
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