| Original Articles |
|
|
|
|
Optical Absorption in SiGe/Si Quantum Well Structures Created by
Subband Transitions |
| YANG Yu;MAO Xu;YANG Hong-Wei;ZHOU Wei;ZHOU Zhen-Lai;LIU Huan-Lin;WANG Xun |
| Department of Materials Science and Engineering, Yunnan
University, Kunming 650091
Surface Physics Laboratory, Fudan University, Shanghai 200433
|
|
| Cite this article: |
|
YANG Yu, MAO Xu, YANG Hong-Wei et al 2001 Chin. Phys. Lett. 18 1655-1657 |
|
|
|
|
Abstract The absorption in Si1-xGex/Si multiple quantum-well structures is measured. Several separated well absorption peaks corresponding to both intersubband and intervalance band transitions in the samples are observed. In the normal incidence, two broadband peaks are attributed to intervalence band transitions HH0-SO0(2.5μm), HH0-LH0(～ 3μm), respectively. Using 45°incidence of unpolarized light, both the intervalance band transitions and intersubband transitions are observed. The intervalance band transitions (HH0-LH0) are Ge composition dependent, but the intersubband transitions, HH0-HH1(5.9μm) and HH0-HH2(4.3μm), are not sensitive to the Ge composition.
|
| Keywords:
78.30.-j
42.70.-k
81.15.-h
|
|
|
Published: 01 December 2001
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
