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EFFECT OF HEAVY DOPING ON THE OPTICAL SPECTRA OF SILICON |
| CHEN Chen-jia*;A. Borghesi;G. Guizzetti;L. Nosenzo;E. Reguzzoni;A .Stella |
| *Department of Physics, Peking University, Beijing
Dipartmento di Fisica "A. Volta" dell University-27100 Pavia, Italy |
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| Cite this article: |
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CHEN Chen-jia, A. Borghesi, G. Guizzetti et al 1985 Chin. Phys. Lett. 2 317-320 |
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Abstract In this paper reflectance (R) and thermoreflectance (TR) spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed. The heavily doped sample shows a red-shift and lifetime broadening in the two singularrities E1 (~3.4eV) and E2(~4.5eV). The values of the scattering time τ extracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.
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Published: 01 July 1985
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