| Original Articles |
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Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition |
| ZHAO Guo-Liang2;LIN Bi-Xia1,2;HONG Liang2;MENG Xiang-Dong2;FU Zhu-Xi1,2 |
| 1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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ZHAO Guo-Liang, LIN Bi-Xia, HONG Liang et al 2004 Chin. Phys. Lett. 21 1381-1383 |
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Abstract ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CH3COO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550°C during growth and then annealed in air at 900°C, has only a ZnO (002) diffraction peak at 34.6° with its FWHM of 0.23° in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380 nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.
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| Keywords:
81.15.Gh
78.55.Et
61.10.Kw
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Published: 01 July 2004
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Et
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(II-VI semiconductors)
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61.10.Kw
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