| Original Articles |
|
|
|
|
Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction |
| LEI Zhen-Kun1; KANG Yi-Lan1;QIU Yu1; HU Ming2; CEN Hao1 |
| 1Department of Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072
2Department of Electronic Science and Technology, School of Electronic Information Engineering, Tianjin University, Tianjin 300072 |
|
| Cite this article: |
|
LEI Zhen-Kun, KANG Yi-Lan, QIU Yu et al 2004 Chin. Phys. Lett. 21 1377-1380 |
|
|
|
Abstract We investigate the capillary effect and the residual stress evolution in the wetting, drying and rewetting stages of porous silicon using x-ray diffraction and micro-Raman spectroscopy. A reversible capillary effect and an irreversible oxidation effect are the driving forces for the residual stress evolution. The lattice expansion of the porous-silicon layer is observed to decrease slightly by x-ray diffraction and the tensile residual stress increases rapidly by micro-Raman spectroscopy, with the change of about 82 MPa for the oxidation effect and the change of 2.78 GPa (enough for cracking) for the capillary effect. Therefore, the capillary effect plays a major role in the residual stress evolution in the stages. A simple microscopic liquid-bridge model is introduced to explain the capillary effect and its reversibility. The capillary emergence has a close relation with a great deal of the micro-pore structure of porous silicon.
|
| Keywords:
81.05.Rm
81.70.Fy
78.30.Am
|
|
|
Published: 01 July 2004
|
|
| PACS: |
81.05.Rm
|
(Porous materials; granular materials)
|
| |
81.70.Fy
|
(Nondestructive testing: optical methods)
|
| |
78.30.Am
|
(Elemental semiconductors and insulators)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
