Chin. Phys. Lett.  2004, Vol. 21 Issue (11): 2308-2309    DOI:
Original Articles |
Ultrafast Photoelectric Effects in Heterojunctions of La0.7Sr0.3MnO3 and Si
Lü Hui-Bin;JIN Kui-Juan;HUANG Yan-Hong;HE Meng;ZHAO Kun;ZHOU Yue-Liang;CHENG Bo-Lin;CHEN Zheng-Hao;DAI Shou-Yu;YANG Guo-Zhen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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Lü Hui-Bin, JIN Kui-Juan, HUANG Yan-Hong et al  2004 Chin. Phys. Lett. 21 2308-2309
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Abstract Ultrafast photoelectric effects have been observed in p--n heterojunctions of La0.7Sr0.3MnO3(LSMO)/Si and LSMO/SrTiO3-/Si for the first time. The rise time was about 1 ns and the full width at half maximum was about 2 ns for the photovoltaic pulse when the heterojunction was irradiated by a laser of ~25 ps pulse duration and 1064 nm wavelength. The photovoltaic sensitivity was as large as 435 mV/mJ for a 1064 nm laser pulse. No such pulse was observed with irradiation from a pulsed 10.6 μm CO2 laser.

Keywords: 85.30.Kk      72.40.+w      67.70.+n      42.50.Vk     
Published: 01 November 2004
PACS:  85.30.Kk (Junction diodes)  
  72.40.+w (Photoconduction and photovoltaic effects)  
  67.70.+n  
  42.50.Vk  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I11/02308
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Lü Hui-Bin
JIN Kui-Juan
HUANG Yan-Hong
HE Meng
ZHAO Kun
ZHOU Yue-Liang
CHENG Bo-Lin
CHEN Zheng-Hao
DAI Shou-Yu
YANG Guo-Zhen
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