| Original Articles |
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esonant Optical Absorption in Semiconductor Quantum Wells |
| YU Li-Yuan;CAO Jun-Cheng |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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YU Li-Yuan, CAO Jun-Cheng 2004 Chin. Phys. Lett. 21 2504-2506 |
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Abstract We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.
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| Keywords:
73.21.Fg
78.67.-n
78.67.De
78.40.Fy
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Published: 01 December 2004
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| PACS: |
73.21.Fg
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(Quantum wells)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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78.67.De
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(Quantum wells)
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78.40.Fy
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(Semiconductors)
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