Preparation and Characterization of GaN Nanowires

Chin. Phys. Lett.

2003, Vol. 20

Issue (4): 568-570 DOI:

Original Articles

Preparation and Characterization of GaN Nanowires

XUE Cheng-Shan¹;YANG Ying-Ge²;MA Hong-Lei²;ZHUANG Hui-Zhao¹;MA Jin²

¹Institute of Semiconductor, Shandong Normal University, Jinan 250014 ²School of Physics and Microelectronics, Shandong University, Jinan 250100

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XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei et al 2003 Chin. Phys. Lett. 20 568-570

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Abstract GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX center to valence band.

Keywords: 78.55.Cr 74.25.Gz 61.16.Bg

Published: 01 April 2003

PACS:	78.55.Cr	(III-V semiconductors)
	74.25.Gz	(Optical properties)
	61.16.Bg

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I4/0568

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