| Original Articles |
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Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser |
| SHAO Ye;LI Lu;LIU Jun-Qi;LIU Feng-Qi;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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SHAO Ye, LI Lu, LIU Jun-Qi et al 2007 Chin. Phys. Lett. 24 717-720 |
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Abstract We report the low threshold current density operation of strain-compensated
In 0.64 Ga 0.36 As/In 0.38 Al 0.62 As quantum cascade lasers emitting near 4.94μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm2 at 80K is achieved for an uncoated 20-μm-wide and 2.5-mm-long laser.
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| Keywords:
42.55.Px
85.60.Bt
71.55.Eq
81.15.Hi
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Received: 01 November 2006
Published: 08 February 2007
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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71.55.Eq
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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