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Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact |
ZHAO De-Sheng;ZHANG Shu-Ming; DUAN Li-Hong;WANG Yu-Tian;JIANG De-Sheng;LIU Wen-Bao;ZHANG Bao-Shun;YANG Hui |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Cite this article: |
ZHAO De-Sheng, ZHANG Shu-Ming, DUAN Li-Hong et al 2007 Chin. Phys. Lett. 24 1741-1744 |
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Abstract Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5×10-4Ωcm2 is obtained at annealing temperature of 550°C.
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Keywords:
81.05.Ea
73.40.-c
61.10.Nz
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Received: 13 January 2007
Published: 17 May 2007
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