Chin. Phys. Lett.  2007, Vol. 24 Issue (6): 1741-1744    DOI:
Original Articles |
Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact
ZHAO De-Sheng;ZHANG Shu-Ming; DUAN Li-Hong;WANG Yu-Tian;JIANG De-Sheng;LIU Wen-Bao;ZHANG Bao-Shun;YANG Hui
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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ZHAO De-Sheng, ZHANG Shu-Ming, DUAN Li-Hong et al  2007 Chin. Phys. Lett. 24 1741-1744
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Abstract Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5×10-4Ωcm2 is obtained at annealing temperature of 550°C.
Keywords: 81.05.Ea      73.40.-c      61.10.Nz     
Received: 13 January 2007      Published: 17 May 2007
PACS:  81.05.Ea (III-V semiconductors)  
  73.40.-c (Electronic transport in interface structures)  
  61.10.Nz  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I6/01741
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ZHAO De-Sheng
ZHANG Shu-Ming
DUAN Li-Hong
WANG Yu-Tian
JIANG De-Sheng
LIU Wen-Bao
ZHANG Bao-Shun
YANG Hui
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