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Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer |
| ZHOU Mei1;ZHAO De-Gang2 |
| 1Department of Physics, China Agriculture University, Beijing 1000832State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHOU Mei, ZHAO De-Gang 2007 Chin. Phys. Lett. 24 1745-1748 |
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Abstract We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n--GaN/n+-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer.
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| Keywords:
81.05.Ea
85.60.Dw
85.60.Bt
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Received: 10 March 2007
Published: 17 May 2007
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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