| Original Articles |
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Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite |
| LIN Jian1,4;LI Di2,4;CHEN Jiang-Shan1;LI Jing-Hong3;MA Dong-Ge1 |
| 1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun 1300223Department of Chemistry, Tsinghua University, Beijing 1000844Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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LIN Jian, LI Di, CHEN Jiang-Shan et al 2007 Chin. Phys. Lett. 24 3280-3282 |
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Abstract A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.
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| Keywords:
85.30.De
73.40.Sx
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Received: 07 August 2007
Published: 23 October 2007
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.40.Sx
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(Metal-semiconductor-metal structures)
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