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High Speed Signal Wavelength Conversion Using Stimulated Raman Effect in Ultrasmall Silicon-on-Insulator Optical Waveguides |
| WU Jian-Wei1,2;LUO Feng-Guang1,2;GALLEP Cristiano de Mello3 |
| 1College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 4300742Wuhan National Laboratory for Optoelectronics, Wuhan 4300743Telecommunication Technology Division/CESET, State University of Campinas, Limeira, SP, Brazil |
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WU Jian-Wei, LUO Feng-Guang, GALLEP Cristiano de Mello 2008 Chin. Phys. Lett. 25 574-577 |
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Abstract We propose the high speed signal wavelength conversion based on timulated Raman effect on silicon waveguides. Simulation results of non-return-to-zero (NRZ) pseudorandom bit sequence (27-1 code) at 500-Gb/s rate of conversion in an ultrasmall silicon-on-insulator (SOI) optical waveguide are presented by co-propagating pump optical field. The most attractive issue is that the inverted converted signal can be obtained at the same wavelength as that of primary signal. In addition, the conversion performances, including extinction ratio (ER) and average peak power of conversion signal, depend strongly on the launching pump intensity.
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42.82.-m
85.30.De
42.65.Re
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Received: 01 August 2007
Published: 30 January 2008
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| PACS: |
42.82.-m
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(Integrated optics)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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