| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques |
GUO Yu-Feng1,2, WANG Zhi-Gong1, SHEU Gene3, CHENG Jian-Bing2 |
| 1Institute of RF- & OE-ICs, Southeast University, Nanjing 210096 2School of Electronics Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003 3Department of Computer Science & Information Engineering, Asia University, Taichung 41354 |
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| Cite this article: |
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GUO Yu-Feng, WANG Zhi-Gong, SHEU Gene et al 2010 Chin. Phys. Lett. 27 067301 |
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Abstract We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, two-dimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off- and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area.
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| Keywords:
73.40.Qv
73.40.Lq
73.61.Cw
71.20.Mq
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Received: 09 October 2009
Published: 25 May 2010
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Cw
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(Elemental semiconductors)
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71.20.Mq
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(Elemental semiconductors)
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