Chin. Phys. Lett.  2010, Vol. 27 Issue (6): 067301    DOI: 10.1088/0256-307X/27/6/067301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques

GUO Yu-Feng1,2, WANG Zhi-Gong1, SHEU Gene3, CHENG Jian-Bing2

1Institute of RF- & OE-ICs, Southeast University, Nanjing 210096 2School of Electronics Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003 3Department of Computer Science & Information Engineering, Asia University, Taichung 41354
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GUO Yu-Feng, WANG Zhi-Gong, SHEU Gene et al  2010 Chin. Phys. Lett. 27 067301
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Abstract

We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, two-dimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off- and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area.

Keywords: 73.40.Qv      73.40.Lq      73.61.Cw      71.20.Mq     
Received: 09 October 2009      Published: 25 May 2010
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.61.Cw (Elemental semiconductors)  
  71.20.Mq (Elemental semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/6/067301       OR      https://cpl.iphy.ac.cn/Y2010/V27/I6/067301
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Articles by authors
GUO Yu-Feng
WANG Zhi-Gong
SHEU Gene
CHENG Jian-Bing
[1] Zhang T, Lu H L, Zhang Y M, Zhang Y M and Ye L H 2008 Chin. Phys. Lett. 25 1818
[2] Yang F, Jin K J, Lu H B, He M and Yang G Z 2009 Chin. Phys. Lett. 26 077301
[3] Qiao M, Zhang B, Li Z J and Fang J 2007 Electron. Lett. 43 1231
[4] Huang Y S and Baliga B J 1991 Proceedings of International Symposium on Power Semiconductor Devices and ICs (Baltimore, USA 22-24 April 1991) p 27
[5] Cheng J B, Zhang B, Duan B X and LI Z J 2008 Chin. Phys. Lett. 25 262
[6] Guo Y F, Li Z J and Zhang B 2006 Microelectron. J. 37 861
[7] Merchant S, Arnold E, Baumgart H, Pein H and Pinker R 1991 Proceedings of International Symposium on Power Semiconductor Devices and ICs (Baltimore, USA 22-24 April 1991) p 31
[8] Zhang S D, Sin J K O and Laim T M L 1999 IEEE Trans. Electron. Devices 46 1036
[9] Baliga B J 1989 IEEE Electron. Device Lett. 10 455
[10] Darwish M N 1999 IEEE Trans. Electron. Devices 44 1117
[11] Aarts A C T and Kloosterman W J 2006 IEEE Trans. Electron. Devices 53 897
[12] Baliga B J 1995 Power Semiconductor Devices (Boston: PWS) chap 7 p 335
[13] Letavic T and Simpson M 2001 US Patent 6221737B1
[14] Monteiro D W, Akhza L O, Sarro P M and Vdovin G 2003 Opt. Express 41 2244
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