| Original Articles |
|
|
|
|
Giant Hall Effect of Fe45.51(Al2O3 )54.49 Nano-granular Film |
| XU Qing-Yu;NI Gang;SANG Hai;DU You-Wei |
| National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 |
|
| Cite this article: |
|
XU Qing-Yu, NI Gang, SANG Hai et al 2000 Chin. Phys. Lett. 17 227-229 |
|
|
|
Abstract A series of Fe45.51(Al2O3 )54.49 nano-granular films were prepared using ion-beam sputtering technique. A saturated hall resistivity of about 12.5μΩ.cm at room temperature was observed. The transmission electron microscopy image showed that very small Fe particles of smaller than 1 nm are embedded in Al2O3 matrix, and connected into network. The measured ρ - T curve indicated that this giant Hall effect may originate from the percolation phenomenon. With different annealing temperature (TA) up to 300oC, the saturated Hall resistivity decreased only a little. The good thermal stability of Fe45.51(Al2O3 )54.49nano-granular Films showed potential application for magnetic sensor.
|
| Keywords:
75.50.Tt
85.30.Fg
|
|
|
Published: 01 March 2000
|
|
| PACS: |
75.50.Tt
|
(Fine-particle systems; nanocrystalline materials)
|
| |
85.30.Fg
|
(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
