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Breakup of 33.4MeV/u 17N on a 9Be Target
HUA Hui, JIANG Dong-Xing, LI Xiang-Qing, QIAN Tao, WU He-Yu, JIN Gen-Ming, ZHAN Wen-Long, DUAN Li-Min, XIAO Zhi-Guang, GUO Zhong-Yan, LI Zu-Yu, WANG Hong-Wei,
WANG Su-Fang
Chin. Phys. Lett. 2000, 17 (3):
188-190
.
Correlation measurements of neutrons and fragments have been performed in a reaction of 33.4MeV/u 17N on a 9Be target. Energy spectra of n and nitrogen fragments were obtained at different angles. Based on the nuclear diffraction dissociation model, the measured energy spectra and the neutron angular distributions were reproduced quite well assuming that 17N was composed of 16N and n or 15N and 2n interacting with the nonlocal separable potential. The satisfactory agreement between the theoretical calculations and the experimental data shows that the contribution of Coulomb dissociation is negligible in the reaction concerned.
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Two Types of Mass Abundance Distributions for Anionic Carbon Clusters Investigated by Laser Vaporization and Pulsed Molecular Beam Techniques
ZHAI Hua- Jin, LIU Bing-Chen, ZHOU Ru-Fang, NI Guo-Quan, XU Zhi-Zhan
Chin. Phys. Lett. 2000, 17 (3):
197-199
.
Two types of mass spectra for anionic carbon clusters C-n have been revealed using laser vaporization and pulsed molecular beam techniques. The less structured mass spectrum characteristic of the magic-numbers at n = 5, 8, 11, 15, and 17 is established at the early stage of the cluster formation process, namely, in the laser vaporization process. The more structured one is featured for a regular odd-even alternation and the magic numbers at n =10, 12, 16, 18, 22, and 28, and has been developed only after extensive clustering and qnenching processes, where low-energy electron attachment plays a vital role. Transition between these two types of mass spectra can be realized by controlling either the strength of the pulsed gas flow or the synchronism between the gas flow and the laser vaporization.
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Effects of Detunings on Dynamically Induced Irreversibility in Coherently Driven Systems
HU Xiang-Ming, PENG Jin-Sheng
Chin. Phys. Lett. 2000, 17 (3):
200-202
.
Effects of detunings on dynamically induced irreversibility is studied for coherently driven V systems in which there is no conventional source of irreversible population pumping. For atomic barium (γ1/γ2= 400 >> 1, where γ1 and γ2 are the rates of the spontaneous decay from the excited states 6s6p1P1 and 6s6p3P1 to the ground state 6s2 1S0, respectively), the strong irreversibility is found to lead to a maximum inversion of 0.77 [only 0.1 in Phys. Rev. Lett. 71 (1993) 4311]. The maximum population inversion requires relatively strong fields coupled respectively to two transitions, a disparity in two atomic decay rates, and the atom-field detunings of opposite signs. However, it is also shown that even in the cases where two detunings have the same sign, or where two decay rates are equal, population inversion takes place.
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Temperature Coefficient of Sound Velocity of Perovskite-Enstatite and Lateral Thermal Heterogeneity in Earth’s Lower Mantle
GONG Zi-Zheng, XIE Hong-Sen, JING Fu-Qian, LIU Yong-Gang,
GUO Jie, XU Jian,
Chin. Phys. Lett. 2000, 17 (3):
218-220
.
Using the differences of sound velocity and temperature on the Hugoniot and isoentropic state, the temperature coefficients of sound velocity of perovskite-enstatite under high pressure were obtained. For compressional, shear and bulk wave velocities, their temperature coefficients decrease from 0.386, 0.251, 0.255m/(s.K) at 40 GPa to 0.197, 0.131, 0.162m/(s.K) at 140 GPa, respectively. Extrapolating these to zero pressure results in (∂K/∂T)0 = -0.0279 GPa.K-1, which is consistent very well with the value got by hydrostatic pressure experiment. On the basis of our data, we conclude that the compressional wave velocity anomaly of 0.1-0.2% in the deep lower mantle and 2% in the D" region would imply lateral thermal heterogeneity with amplitude of 53-106K and 1066K in these regions, respectively.
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Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition
MU Hai-Chuan, REN Cong-Xin, JIANG Bing-Yao, DING Xing-Zhao, YU Yue-Hui, WANG Xi, LIU Xiang-Huai, ZHOU Gui-En, JIA Yun-Bo
Chin. Phys. Lett. 2000, 17 (3):
221-223
.
The (001) oriented yttria-stabilized zirconia (YSZ) films with in-plane biaxial texture have been deposited on Si(111) substrates by ion beam assisted deposition at ambient temperature. The effects of ion/atom arrival rate ratio (R=(Ar+O+2)/ZrO2) and incident angle of bombarding ion beam on the film texture development were investigated. It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1.9, but it was degraded with the further increase of R. The optimal in-plane biaxial texture, whose full width at half maximum of the (111) ø-scan spectrum is 14°, can be obtained at R=1.9 and incident angle of 55°. For a fixed R, the optimal crystallinity and in-plane biaxial alignment of the YSZ films did not appear at the s,ame incident angle and showed an opposite variation with the change of the incident angle from 51°to 55°C-axis alignment (perpendicular to substrate surface) does not show any substantial variation with the change of incident angle within the range of 47°– 56°.
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Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition
CHEN Peng, SHEN Bo, ZHU Jian-Min, CHEN Zhi-Zhong, ZHOU Yu-Gang, XIE Shi-Yong, ZHANG Rong, HAN Ping, GU Shu-Lin, ZHENG You-Dou, JIANG Shu-Sheng, FENG Duan Z. C. Huang*
Chin. Phys. Lett. 2000, 17 (3):
224-226
.
Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those domains locate near the bunched steps, and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3nm thick, can also be observed between the GaN buffer layer and the Si substrate.
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27 articles
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