Chin. Phys. Lett.  1986, Vol. 3 Issue (12): 561-564    DOI:
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ELECTRONIC STRUCTURES AND THE PROPERTIES OF HYDROGEN IN SILICON
CUI Shufan;MAI Zhenhong
Institute of Physics, Academia Sinica, Beijing
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CUI Shufan, MAI Zhenhong 1986 Chin. Phys. Lett. 3 561-564
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Abstract The electronic structures of hydrogen in silicon are treated theoretically in a Si-H bond unit representation using the approximation of solid state matrix elements. it -is found that some unusual properties in c-Si are caused by the changes of the electronic state of hydrogen in silicon when Si-H bonds dissolve at certain temperature.
Published: 01 December 1986
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1986/V3/I12/0561
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