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Substrate Dependence of Properties of Sputtered ITO Films |
| GAO Mei-Zhen1,2;SHI Hui-Gang1;Job R.2;LI Fa-Shen1;Fahrner W. R.2 |
| 1Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000
2Department of Electronic Devices, Faculty of Electrical Engineering, University of Hagen, Haldener Str. 182, D-58084 Hagen, Germany |
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| Cite this article: |
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GAO Mei-Zhen, SHI Hui-Gang, Job R. et al 2005 Chin. Phys. Lett. 22 1228-1231 |
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Abstract High-quality indium-tin-oxide (ITO) films are deposited on p-type Czochralski silicon and 7059 Corning glass by direct-current magnetron sputtering at various temperatures. The structural, electrical and optical properties of the ITO films are investigated as functions of the substrate temperature. A comparison between the characteristics of the ITO films on silicon and Corning glass is presented. The results show that for the ITO film on silicon, the nucleation begins from room temperature; the resistivity reaches a maximum value at 75°C; the reflectivity increases with increasing temperature; when temperature is above 125°C, the ITO grows in a three-dimensional manner and forms a granular structure. However, for the ITO film on glass, it is still in an amorphous state at 75°C. Moreover, both the resistivity and the reflectivity decrease with increasing temperature. Above 125°C, the ITO grows in a two-dimensional manner and forms a domain structure.
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| Keywords:
73.61.-r
68.55.-a
78.20.-e
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Published: 01 May 2005
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| PACS: |
73.61.-r
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(Electrical properties of specific thin films)
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68.55.-a
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(Thin film structure and morphology)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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