Growth and Characterization of Cu<suB>2</suB>O Films Made by Rapid Thermal Oxidation Technique

Chin. Phys. Lett.

2005, Vol. 22

Issue (11): 2977-2979 DOI:

Original Articles

Growth and Characterization of Cu₂O Films Made by Rapid Thermal Oxidation Technique

Raid A. Ismail¹;Ibrahim Ramadhan¹;Aseel Mustafa¹

sup>1Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq ²Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq

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Raid A. Ismail, Ibrahim Ramadhan, Aseel Mustafa 2005 Chin. Phys. Lett. 22 2977-2979

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Abstract Cu₂O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500°C for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around (1.1×10^-5Ω^-1cm^-1) at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu₂O obtained by other methods.

Keywords: 81.15.Gh 73.61.-r 73.50.Lw 78.66.-w

Published: 01 November 2005

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	73.61.-r	(Electrical properties of specific thin films)
	73.50.Lw	(Thermoelectric effects)
	78.66.-w	(Optical properties of specific thin films)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I11/02977

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	Aseel Mustafa

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