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Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells |
LI Wei-liang;QIU Zhi-ren;PENG Wen-ji;HUANG Xu-guang;ZHOU Jian-ying;YU Zhen-xin |
State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275 |
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Cite this article: |
LI Wei-liang, QIU Zhi-ren, PENG Wen-ji et al 1996 Chin. Phys. Lett. 13 237-240 |
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Abstract We present room temperature femtosecond reflection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells (MQW). A rising wing with a time constant of about 5ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5 x 1011cm-2. This phenomenon is explained as the saturation of the excitonic transitions.
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Keywords:
78.47.+p
78.66.-w
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Published: 01 March 1996
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