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Optical Absorption of the Nanostructured SiO2 in Ultraviolet-Near Infrared Light Range |
| ZHANG Biao;ZHANG Li-de;MO Chi-mei
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| Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
*Department of Materials Sciences and Engineering, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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ZHANG Biao, ZHANG Li-de, MO Chi-mei 1996 Chin. Phys. Lett. 13 234-236 |
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Abstract The electronic structure of nanostructured SiO2 was studied by means of ultravioletnear infrared absorption spectra. A strong and broad absorption band was observed in the wavelength range of ultraviolet-near infrared light. This band is caused by the electronic transition from the valence band to the defect energy level in the bandgap which was theoretically calculated by using molecular orbital approach. With increasing the annealing temperature, the red shift of this band was observed. The mechanism of this band is discussed.
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| Keywords:
78.40.Ha
64.80.Gd
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Published: 01 March 1996
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