| Original Articles |
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Preparation and Microstructure of Nanosized GaN Crystals |
| YU San;LI Hong-dong;YANG Hai-bin;LI Dong-mei;SUN Hai-ping;ZOU Guang-tian
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| National Laboratory of Superhard Materials, Jilin University, Changchun 130023 |
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| Cite this article: |
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YU San, LI Hong-dong, YANG Hai-bin et al 1996 Chin. Phys. Lett. 13 444-446 |
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Abstract Gallium nitride crystals in nano-scale have been fabricated by dc arc plasma method using gallium and N2 +NH3 as starting materials. Transmission electron microscope, selected area diffraction and x-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants a0 = 3.18 Å and c0 = 5.18 Å.
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| Keywords:
42.70.Nq
81.20.Ev
61.16.Bg
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Published: 01 June 1996
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| PACS: |
42.70.Nq
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(Other nonlinear optical materials; photorefractive and semiconductor materials)
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81.20.Ev
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(Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)
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61.16.Bg
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