Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure

Chin. Phys. Lett.

1996, Vol. 13

Issue (10): 768-771 DOI:

Original Articles

Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure

GU Bing-lin;DUAN Wen-hui;XIONG Shi-ying

Department of Physics, Tsinghua University, Beijing 100084

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GU Bing-lin, DUAN Wen-hui, XIONG Shi-ying 1996 Chin. Phys. Lett. 13 768-771

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Abstract The dependence of optical interface phonon on structure was demonstrated for thin layer inserted GaAlAs quantum well structures. It was found that the dispersion is sensitive to the Al-content of the inserted layer but almost independent of the position of the layer. The results showed that phonon modes can be modulated by adjusting the well parameters, which is useful for some device applications.

Keywords: 63.20.-e 73.40.Kp

Published: 01 October 1996

PACS:	63.20.-e	(Phonons in crystal lattices)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I10/0768

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