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Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber |
{ZHANG Qiu-Lin1;FENG Bao-Hua1;ZHANG Dong-Xiang1;FU Pan-Ming1;ZHANG Zhi-Guo1;ZHAO Zhi-Wei2;DENG Pei-Zhen2;XU Jun2;XU Xiao-Dong2;WANG Yong-Gang3;MA Xiao-Yu3 |
1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Cite this article: |
{ZHANG Qiu-Lin, FENG Bao-Hua, ZHANG Dong-Xiang et al 2003 Chin. Phys. Lett. 20 1741-1743 |
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Abstract A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.
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Keywords:
42.55.Xi
42.60.Gd
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Published: 01 October 2003
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