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Atomic-Scale Kinetic Monte Carlo Simulation of {100}-Oriented Diamond Film Growth in C-H and C-H-Cl Systems by Chemical Vapor Deposition |
| AN Xi-Zhong1;ZHANG Yu2;LIU Guo-Quan1;QIN Xiang-Ge1;WANG Fu-Zhong1;LIU Sheng-Xin1 |
| 1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
2School of Applied Science, University of Science and Technology Beijing, Beijing 100083 |
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| Cite this article: |
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AN Xi-Zhong, ZHANG Yu, LIU Guo-Quan et al 2002 Chin. Phys. Lett. 19 1019-1020 |
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Abstract We simulate the {100}-oriented diamond film growth of chemical vapor deposition (CVD) under different models in C-H and C-H-Cl systems in an atomic scale by using the revised kinetic Monte Carlo method. The simulation results show that: (1) the CVD diamond film growth in the C-H system is suitable for high substrate temperature, and the film surface roughness is very coarse; (2) the CVD diamond film can grow in the C-H-Cl system either at high temperature or at low temperature, and the film quality is outstanding; (3) atomic Cl takes an active role for the growth of diamond film, especially at low temperatures. The concentration of atomic Cl should be controlled in a proper range.
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| Keywords:
81.15.Gh
81.05.Tp
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Published: 01 July 2002
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Tp
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