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Crisis of Transient Chaos
WANG Wen-Xiu, LU Yun-Qing, CHEN He-Sheng, MA Ming-Quan, ZHU You-Zhang, HE Da-Ren
Chin. Phys. Lett. 2002, 19 (7):
901-903
.
A new kind of crisis, which is marked by a sudden change of a strange repeller, is observed in an electronic relaxation oscillator. Firstly, by its simplified piecewise linear model, we show analytically that a strange repeller appears after a hole-induced crisis, and that the fractal dimension of the strange repeller and the averaged lifetime of the iterations in the region occupied by the original attractor suddenly change at the critical parameter value when the repeller disappears. Our numerical investigation convinces us that the corresponding phenomenon can be found in the original electronic relaxation oscillator.
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Development of On-Line Perturbed Angular Correlation
ZHU Sheng-Yun, ZHU Jia-Zheng, T. Minamisono, K. Matsuta, XU Yong-Jun, M. Fukuda, M. Mihara, WANG Zhi-Qiang, CUI Bao-Qun, RONG Chao-Fan, CHU Cheng-Jie, CHEN Jun, LUO Hai-Long, ZHENG Yong-Nan, ZHOU Dong-Mei
Chin. Phys. Lett. 2002, 19 (7):
915-916
.
The on-line time differential perturbed angular correlation technique has been developed for the first time. The quadrupole interaction of 19F in Cd was measured.
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Isotopic Distributions of the 18N Fragmentation Products in Coincidence with Neutrons on Targets 197Au and 9Be
LI Xiang-Qing, JIANG Dong-Xing, YE Yan-Lin, HUA Hui, CHEN Tao, LI Zhi-Huan, GE Yu-Cheng, WANG Quan-Jin, WU He-Yu, JIN Gen-Ming, DUAN Li-Min, XIAO Zhi-Gang, WANG Hong-Wei, LI Zhu-Yu, WANG Su-Fang
Chin. Phys. Lett. 2002, 19 (7):
917-920
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We present the experimental isotopic distributions of the 18N projectile fragmentation products Li, Be, B, and C in coincidence with neutrons, as well as the inclusive ones on 197Au and 9Be targets. In the framework of the abrasion-ablation model, these distributions are calculated for various nucleon density distributions of the projectile. The comparison with the experimental isotopic distributions of the projectile-like fragments in coincidence with neutrons shows that the information on the nucleon density distribution of the 18N projectile can be extracted.
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Quasi-elastic Scattering of a Secondary 6He Beam on a 9Be Target at 25MeV/Nucleon
CHEN Tao, YE Yan-Lin, LI Zhi-Huan, JIANG Dong-Xing, HUA Hui, LI Xiang-Qing, WANG Quan-Jing, GE Yu-Cheng, PANG Dan-Yang, DI Zhen-Yu, JIN Gen-Ming, XIAO Guo-Qing, GUO Zhong-Yan, XIAO Zhi-Gang, WANG Hong-Wei, ZHANG Bao-Guo, WU He-Yu, LI Jia-Xing, SUN Zhi-Yu, ZHAN Wen-Long
Chin. Phys. Lett. 2002, 19 (7):
921-922
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The quasi-elastic scattering of a secondary 6He beam (25 MeV/n) on a 9Be target has been measured for the first time by applications of a sophisticated tracking detector system. The angular distribution is reported. A phenomenological optical potential is obtained by fitting the experimental data, which encourages more accurate experiment measurements.
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Transition of the True Ground State in a Coupled Three-Layer Quantum Dot
ZHANG Zhan-Jun, LI Bai-Wen, RAO Jian-Guo, BAO Cheng-Guang
Chin. Phys. Lett. 2002, 19 (7):
978-980
.
Low-lying states of a vertically coupled three-layer quantum-dot system are studied. Each layer contains one electron, and the tunnelling of electrons between layers is neglected. Effects of the interlayer separation d and the external magnetic field B are evaluated by numerical calculations. In the strong coupling case (i.e., d is small), as in a single dot, transitions of the angular momentum L of the true ground states occur when B increases, whereas in the weak coupling case the transition does not occur and the L remains zero. Furthermore, it is found that the variation of d may also induce the L-transition. As a result, a phase diagram of L of the true ground state is given in the d - B plane.
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Dynamic Localization of a One-Dimensional Quantum Dot Array in an ac Electric Field
LUO Ying, DUAN Su-Qing, FAN Wen-Bin, ZAO Xian-Geng, WANG Li-Min, MA Ben-Kun
Chin. Phys. Lett. 2002, 19 (7):
981-984
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We investigate the dynamics of two interaction electrons confined to one-dimensional quantum dot array in an ac electric field. We find that initially localized electrons will maintain localized in the absence of Coulomb interaction if the ratio of the ac field magnitude to the frequency is a root of the ordinary zero-order Bessel function. In contrast to the case without Coulomb interaction, no matter what the value is, the electrons are delocalized and the delocalization effect depends on the ratio U/ω and eaE/ω, where U is the strength of Coulomb interaction, a is the lattice constant, and E and ω are the ac field amplitude and frequency, respectively.
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Magnetic Properties and Magnetoresistance Effect of YMn6Sn6-xCrx (x = 0-0.8) Compounds
ZHANG Li-Gang, LI Yun-Bao, ZHANG Shao-Ying, YAO Jin-Lei, SHEN Bao-Gen
Chin. Phys. Lett. 2002, 19 (7):
996-999
.
The magnetic properties and magnetoresistance effect of
YMn6Sn6-xCrx (x = 0-0.8) compounds have been experimentally studied by magnetic properties and resistivity measurements in the applied field range 0-5 T. The compound (x = 0.8) displays the ferromagnetic behaviour, while the compounds (x = 0-0.4) display the antiferromagnetic behaviour in the whole ordering temperature range. The compounds (x = 0.5, 0.6) experienced a transition from an antiferromagnetic state to ferromagnetic one with increasing temperature. The compound with x = 0.8 is rapidly saturated in the lower magnetic field with saturation magnetization of 35.92 emu/g. The compounds (x = 0-0.6) display a field induced metamagnetic transition, and the threshold fields decrease with increasing Cr content. The cell-volume V of compounds (x = 0-0.8) increases, and the ordering temperature decreases with the increasing Cr content. A large magnetoresistance effect was observed for the compounds (x = 0.4, 0.5), and the maximum absolute value at 5 K are 32% and 24% under 5 T for x = 0.4 and x = 0.5, respectively.
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Modulation Spectroscopy of GaAs Covered by InAs Quantum Dots
JIN Peng, MENG Xian-Quan, ZHANG Zi-Yang, LI Cheng-Ming, QU Sheng-Chun, XU Bo, LIU Feng-Qi, WANG Zhan-Guo, LI Yi-Gang, ZHANG Cun-Zhou, PAN Shi-Hong
Chin. Phys. Lett. 2002, 19 (7):
1010-1012
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Contactless electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n+ GaAs surface covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs). It is shown that the 1.8 ML InAs QDs moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs, whereas 1.6 ML InAs on GaAs does not modify the Fermi level. It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi level at GaAs surface is due to the QDs, which are surrounded by some oxidized InAs facets, rather than the wetting layer.
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46 articles
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