Controllable Ultra Low- k by Via-Typed Air Gap with the Better Design Margin for Logic Devices below 45nm Node

doi:10.1088/0256-307X/27/9/097701

Chin. Phys. Lett.

2010, Vol. 27

Issue (9): 097701 DOI: 10.1088/0256-307X/27/9/097701

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Controllable Ultra Low- k by Via-Typed Air Gap with the Better Design Margin for Logic Devices below 45nm Node

CHOI Youn-Ok¹, KIM Sang-Yong²

¹Department of Electrical Engineering, Chosun University, #375, Seosuk-dong, Dong-gu, Gwangju 501-759, Republic of Korea ²Department of Semiconductor System, Korea Polytechnic College IV, Cheongju 361-857, Republic of Korea

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CHOI Youn-Ok, KIM Sang-Yong 2010 Chin. Phys. Lett. 27 097701

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Abstract

By changing the air gap to a via-typed air gap, the height of the air gap is reduced up to about 50% compared to the height of the trench-typed air gap. The controllable (1≤k <2.9) ultra low-k is also easily fabricated by adjusting the space of the via-typed air gap. The via-typed air gap makes the design margin better due to its lower height in the dense and narrow lines.

Keywords: 77.55.-g 77.55.Bh 77.55.df

Received: 04 May 2010 Published: 25 August 2010

PACS:	77.55.-g	(Dielectric thin films)
	77.55.Bh	(Low-permittivity dielectric films)
	77.55.df	(For silicon electronics)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/9/097701 OR https://cpl.iphy.ac.cn/Y2010/V27/I9/097701

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	CHOI Youn-Ok
	KIM Sang-Yong

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