Chin. Phys. Lett.  2010, Vol. 27 Issue (9): 097701    DOI: 10.1088/0256-307X/27/9/097701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Controllable Ultra Low- k by Via-Typed Air Gap with the Better Design Margin for Logic Devices below 45nm Node

CHOI Youn-Ok1, KIM Sang-Yong2

1Department of Electrical Engineering, Chosun University, #375, Seosuk-dong, Dong-gu, Gwangju 501-759, Republic of Korea 2Department of Semiconductor System, Korea Polytechnic College IV, Cheongju 361-857, Republic of Korea
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CHOI Youn-Ok, KIM Sang-Yong 2010 Chin. Phys. Lett. 27 097701
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Abstract

By changing the air gap to a via-typed air gap, the height of the air gap is reduced up to about 50% compared to the height of the trench-typed air gap. The controllable (1≤k <2.9) ultra low-k is also easily fabricated by adjusting the space of the via-typed air gap. The via-typed air gap makes the design margin better due to its lower height in the dense and narrow lines.

Keywords: 77.55.-g      77.55.Bh      77.55.df     
Received: 04 May 2010      Published: 25 August 2010
PACS:  77.55.-g (Dielectric thin films)  
  77.55.Bh (Low-permittivity dielectric films)  
  77.55.df (For silicon electronics)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/9/097701       OR      https://cpl.iphy.ac.cn/Y2010/V27/I9/097701
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CHOI Youn-Ok
KIM Sang-Yong
[1] Faguet J, Lee E, Junjun L, Brcka J and Akiyama O 2009 Proceedings of IEEE International Interconnect Technology Conference IITC 2009 p 35
[2] Gallitrea M, Farcy A, Blampey B, Bermonda C, Flécheta B and Ancey P 2010 Microelectron. Eng. 87 321
[3] Park H, Kraatz M, Im J, Kastenmeier B and Ho P S 2009 Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications (New York: Springer)
[4] Daamen R, Bancken P H L, Nguyen V H, Humbert A, Verheijden G J A M and Hoofman R J O M 2007 Microelectron. Eng. 84 2177
[5] Piontek A, Vanhoucke T, Van Huylenbroeck S, Choi L J, Hurkx G A M, Hijzen E and Decoutere S 2007 Semicond. Sci. Technol. 22 S9
[6] Chan K and Gleason K K 2006 J. Electrochem. Soc. 153 C223
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