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Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy |
| WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han |
| State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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WU Dong-Hai, NIU Zhi-Chuan, ZHANG Shi-Yong et al 2006 Chin. Phys. Lett. 23 1005-1008 |
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Abstract High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.
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| Keywords:
78.55.Cr
81.15.Hi
68.35.Dv
42.55.Px
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Published: 01 April 2006
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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68.35.Dv
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(Composition, segregation; defects and impurities)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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