Chin. Phys. Lett.  2006, Vol. 23 Issue (4): 1002-1004    DOI:
Original Articles |
Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films
XU Chuan-Ming1;SUN Yun1;LI Feng-Yan1;ZHANG Li1;XUE Yu-Ming1;HE Qing1;LIU Hong-Tu2
1Institute of Photoelectronics, Nankai University, Tianjin 300071 2Department of Physics, University of Science and Technology of China, Hefei 230026
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XU Chuan-Ming, SUN Yun, LI Feng-Yan et al  2006 Chin. Phys. Lett. 23 1002-1004
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Abstract Composition dependence of quaternary CuIn1-xGaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm-1 for CuInSe2 to 185cm-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x>0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.
Keywords: 78.30.Fs      68.55.Nq      81.15.Kk      61.66.Fn     
Published: 01 April 2006
PACS:  78.30.Fs (III-V and II-VI semiconductors)  
  68.55.Nq (Composition and phase identification)  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
  61.66.Fn (Inorganic compounds)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I4/01002
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XU Chuan-Ming
SUN Yun
LI Feng-Yan
ZHANG Li
XUE Yu-Ming
HE Qing
LIU Hong-Tu
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