| Original Articles |
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Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped AlxGa1-xN/GaN Heterostructure |
| HAN Xiu-Xun;WU Jie-Jun;LI Jie-Min;CONG Guang-Wei;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,
PO Box 912, Beijing 100083 |
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| Cite this article: |
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HAN Xiu-Xun, WU Jie-Jun, LI Jie-Min et al 2005 Chin. Phys. Lett. 22 2096-2099 |
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Abstract Low-temperature photoluminescence measurement is performed on an undoped AlxGa1-xN/GaN heterostructure. Temperature-dependent Hall mobility confirms the formation of two-dimensional electron gas (2DEG) near the heterointerface. A weak photoluminescence (PL) peak with the energy of ～79meV lower than the free exciton (FE) emission of bulk GaN is related to the radiative recombination between electrons confined in the triangular well and the holes near the flat-band region of GaN. Its identification is supported by the solution of coupled one-dimensional Poisson and Schrödinger equations. When the temperature increases, the red shift of the 2DEG related emission peak is slower than that of the FE peak. The enhanced screening effect coming from the increasing 2DEG concentration and the varying electron distribution at two lowest subbands as a function of temperature account for such behaviour.
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| Keywords:
78.66.Fd
73.40.Kp
78.55.Cr
81.15.Gh
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Published: 01 August 2005
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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78.55.Cr
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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